1) Bongata bo tlase.
2) Ho hanyetsa ts'enyeho.
3) Ho hanyetsa ho robeha.
4) Ho hanyetsa ho kenngwa ha oksijene.
5) Ho hanyetsa ho kgohlahala ha letlalo.
6) Ho hanyetsa ho ts'oaroa ha mocheso hantle (ka lebaka la coefficient e tlase ea katoloso ea mocheso le conductivity e phahameng ea mocheso).
7) Matla a Hlollang mochesong o phahameng.
8) Taolo e ntle ea boholo ba libopeho tse rarahaneng.
Lihlahisoa tse hanang ho roala: Poleiti ea Silicon carbide, setene sa Silicon carbide, lesela la liphaephe, Khoune ea Pipe, sefefo, jj.
Thepa ea ka tlung ea setofo: Poleiti, Beam, Roller, Burner Nozzle, Beam e chitja, beam e sekoere, beam e nang le masoba. E ka sebelisoa ka ho chesoa ka mollo, Sagger, jj.
Tse ling: Li-nozzle tsa Desulfurization
Tšebeliso ea Karabelo e Kopantsoeng ea Silicon Carbide:
Carbide ea silicon e kopantsoeng le karabelo e ipakile e le khetho e ntle ea thepa bakeng sa lits'ebetso tsa ho tsofala tse kang liphaephe, li-Nozzle, li-choke tsa taolo ea phallo le likarolo tse kholo tsa ho tsofala merafong hammoho le liindastering tse ling.
| Matlo | Diyuniti | SiSiC/RBSIC |
| Bongata ba bongata (SiC) | V01% | ≥85 |
| Bongata ba bongata | g/cm3 | 3.01 |
| Ho bonahala eka ho na le masoba | % | 0.1 |
| Modulus ea ho phatloha ha mocheso oa 20℃ | Mpa | 250 |
| Modulus ea ho phatloha ha mocheso ho 1200℃ | Mpa | 280 |
| Modulus ea ho tenyetseha ha mocheso ho 20℃ | Gpa | 330 |
| Ho tiea ha ho robeha | Mpa*m1/2 | 3.3 |
| Ho tsamaisa mocheso ka mocheso ho 1200℃ | wm-1.k-1 | 45 |
| Katoloso ea mocheso ho 1200℃ | a×10-6/℃ | 4.5 |
| Ho hanyetsa ho thothomela ha mocheso ho 1200℃ | Hantle haholo | |
| Coefficient ea mahlaseli a mocheso | <0.9 | |
| Mocheso o sebetsang haholo | ℃ | 1350 |
e ka etsoa ka mokhoa o ikhethileng ho latela litlhoko tsa bareki.
Re amohela liodara tse ikhethileng.
Haeba o batla ho tseba haholoanyane ka tlhahisoleseling ea sehlahisoa, rea u amohela ho ikopanya le rona 'me re tla u fa sehlahisoa se loketseng ka ho fetisisa le tšebeletso e ntle ka ho fetisisa!